[20p-B103-1~19] 6.1 Ferroelectric thin films

[20p-B103-6] [Young Scientist Presentation Award Speech] Examination of scaling down in (Al, Sc)N films for memory applications

〇Shinnosuke Yasuoka¹, Reika Ota¹, Kazuki Okamoto¹, Keisuke Ishihama¹, Takao Shimizu^2,3, Kuniyuki Kakushima¹, Masato Uehara⁴, Hiroshi Yamada⁴, Morito Akiyama⁴, Tomoyuki Koganezawa⁵, Loku Singgappulige Rosantha Kumara⁵, Okkyun Seo⁵, Osami Sakata⁵, Hiroshi Funakubo¹ (1.Tokyo Tech., 2.NIMS, 3.JST PREST, 4.AIST, 5.JASRI)

Keywords:ferroelectric film, AlScN, low voltage drive

(Al,Sc)N films, which was reported to exhibit ferroelectricity in 2019, are expected to be applied to ferroelectric random access memorys due to its outstanding properties such as the huge remanent polarization (P_r) value. Thinner films and lower coercive fields (E_c) are necessary for low-voltage drive of memories. In conventional ferroelectric materials, the crystal structure and electrical properties change as the film becomes thinner. In this study, using a capacitor with a metal-ferroelectric-metal structure, we investigated the effect of strain on the ferroelectric properties of (Al,Sc)N films by the electrode layer. Furthermore, we examined the thinning of these films.