[20p-B201-1~16] 15.4 III-V族窒化物結晶

[20p-B201-12] Dislocation Morphologies of Molecular Beam Epitaxy Grown AlN on Sputter-Annealed N-polar AlN

〇林 侑介¹、Tohei Tetsuya¹、Zhang Zexuan²、Xing Huili (Grace)^2,3,4、Jena Debdeep^2,3,4、Cho Yongjin²、Miyake Hideto⁵、Sakai Akira¹ (1.Grad. Sch. Eng. Sci., Osaka Univ.、2.Sch. Elec. Comp. Eng., Cornell Univ.、3.Dept. Mater Sci. Eng., Cornell Univ.、4.Kavli Inst. Cornell Nano. Sci.、5.Grad. Sch. Eng., Mie Univ.)

キーワード：AlN、TEM

Low-dislocation-density N-polar AlN templates fabricated by face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) are promising for realizing novel N-polar Al_xGa_1-xN optoelectronic and electronic devices. This work reports plan-view threading dislocation (TD) analysis of molecular beam epitaxy (MBE) grown AlN on N-polar FFA Sp-AlN.