Optical characterization of highly Si doped-AlxGa1-xN grown via sputtering

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Tue. Sep 20, 2022 1:30 PM - 6:00 PM B201 (B201)

Tsutomu Araki(Ritsumeikan Univ.), Atsushi Kobayashi(Univ. of Tokyo), Yusuke Hayashi(Osaka Univ.)

3:30 PM - 3:45 PM

〇Yuto Nishikawa¹, Ryota Maeda¹, Kohei Ueno¹, Atushi Kobayashi¹, Hiroshi Fujioka¹ (1.IIS)

Keywords:sputtering, AlGaN, doping