[20p-B203-1~22] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▲ [20p-B203-10] Investigation of Capacitance–Voltage Characteristics of p-Si/n-Ga₂O₃ Heterostructures Fabricated by Surface-Activated Bonding

〇Zhenwei Wang¹、Daiki Takatsuki²、Jianbo Liang²、Takahiro Kitada^1,2、Naoteru Shigekawa²、Masataka Higashiwaki^1,2 (1.NICT、2.OMU)

キーワード：Gallium oxide, p-n junction, surface-activated bonding

In this work, for the first time, we fabricated p-Si/n-Ga₂O₃ heterostructures by surface-activated bonding (SAB) and investigated their capacitance–voltage (C–V) characteristics. Unique two-step C–V characteristics were measured, which was attributed to the formation of two-dimensional electron gas at the Si-side heterointerface. The measured C–V characteristics were well explained by simple energy band diagrams, which suggests SAB is promising to fabricate high-quality heterostructures between Ga₂O₃ and other materials with mismatched lattices.