The 83rd JSAP Autumn Meeting 2022

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Sep 20, 2022 1:00 PM - 7:00 PM B203 (B203)

Takeyoshi Onuma(Kogakuin Univ.), Hiroyuki Nishinaka(Kyoto Inst. of Tech.)

6:00 PM - 6:15 PM

[20p-B203-19] Single-domain κ-Ga2O3 thin films grown on ε-GaFeO3 substrates

〇HIROYUKI NISHINAKA1, OSAMU UEDA2, HIDEKI SAKO3, NORIAKI IKENAGA4, YUJI MIYATO5, NORIYUKI HASUIKE1, KAZUTAKA KANEGAE1, MASAHIRO YOSHIMOTO1 (1.Kyoto Inst. Tech., 2.Meiji Univ., 3.Toray Res. Center, 4.Kanazawa Inst. Tech., 5.Ryukoku Univ.)

Keywords:Ga2O3, GaFeO3, mist CVD