[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-20] Development of Defects with Increased Al Composition in (Al_xGa_1-x)₂O₃ Thin Films

〇Takumi Ohtsuki¹, Masataka Higashiwaki^1,2 (1.NICT, 2.Osaka Metropolitan Univ.)

Keywords:gallium oxide

To develop high-performance lateral Ga₂O₃ MOSFET with a sub-0.1-mm gate length, it is necessary to suppress the short channel effect. Insertion of an (Al_xGa_1-x)₂O₃ layer between a Ga₂O₃ channel layer and a substrate as a back barrier is effective to improve the decrease of the threshold gate voltage because of the short channel effect. In this work, to evaluate the quality of the (Al_xGa_1-x)₂O₃ epilayer, we systematically studied Al composition dependences of structural properties of (Al_xGa_1-x)₂O₃ thin films on b-Ga₂O₃ (010) substrates grown by molecular beam epitaxy (MBE).