[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-2] (Ir_xGa_1-x)₂O₃ /α-Al₂O₃(0001) heterogrowth by PLD method

〇(M2)Shunnosuke Miki¹, Hyuga Matsuda¹, Naohumi Takeda¹, Yasushi Hotta¹, Yi Tang¹, Kouhei Sasaki², Akito Kuramata², Kazushi Miki¹ (1.U. Hyogo, 2.NCT)

Keywords:wide gap semiconductor, gallium oxide, heteroepitaxy

β-Ga₂O₃ is a low-cost, high-performance material with the potential for higher breakdown voltage and lower loss. However, β-Ga₂O₃ has a problem that p-type dopants, which are indispensable for high breakdown voltage, have not yet been discovered. In this study, (Ir_xGa_1-x)₂O₃/α-Al₂O₃ heterogroth was tried as a preliminary step (Ir_xGa_1-x)₂O₃/β-Ga₂O₃ heterogroth, which is one candidate for solving the problem.