[20p-B204-1~13] 6.3 Oxide electronics

△ [20p-B204-12] Topochemical reductive epitaxy of V_xO_y thin films by uniaxial compressive annealing

〇Hiroki Shoji¹, Reo Kato¹, Kenta Kaneko¹, Satoru Kaneko^2,1, Mamoru Yoshimoto¹, Akifumi Matsuda¹ (1.Tokyo Tech, 2.KISTEC)

Keywords:vanadium oxide, epitaxial thin films, topotaxy

Vanadium oxide is expected to be applied to various devices because of its wide range of oxidation states and primary structural transition in response to temperature and pressure changes. We have previously found phase-selective solid-state epitaxy and topochemical phase control of the reduced phase in response to applied pressure by uniaxial compression annealing (UCA) of amorphous V₂O₅ thin films. In this study, V₂O₅ epitaxial thin films were used as a precursor to investigate the phase change by UCA and the effect of applied pressure on the phase control and physical properties.