[20p-C202-1~8] 15.7 Crystal characterization, impurities and crystal defects

[20p-C202-2] Impact of Interstitial Oxygen on Stability of Nitrogen-Vacancy Complexes in Czochralski Silicon Single Crystals (2)

〇Akira Sada¹, Yusuke Noda², Koji Sueoka², Kaoru Kajiwara³, Masataka Hourai³ (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ., 3.SUMCO Corporation)

Keywords:nitrogen, Vacancy, Oxygen

Control of point defects is an important technical issue in improving the quality of CZ-Si single crystals, and it is known that the addition of nitrogen (N) in Si crystals suppresses the aggregation of atomic vacancies (V) and significantly reduces the size of void defects. Recently, it has been revealed that the void suppression effect by N weakens as the oxygen (O) concentration incorporated into the Si crystal increases due to the CZ method. We present and discuss the results of first-principles calculations of complexes containing N, V, and O related to these phenomena.