[20p-C202-1~8] 15.7 Crystal characterization, impurities and crystal defects

[20p-C202-6] Quality of silicon substrate and point defects (8) Non-uniformity of lattice parameter in Avogadro crystal

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ.)

Keywords:silicon crystal, lattice parameter, defects

New International system of Units relies on the perfection of ²⁸Si crystal and ultra-precise measurement of lattice parameter, volume and weight of it. Nonuniformity in specimen due to defects degrade the reliability. The measured lattice parameter (LP) nonuniformity was analyzed. Nonuniformity of isotope and carbon concentration is estimated to be 0.1% and 90% respectively, so that SIMS profiling is promising. and the application of novel diagnostics technique and well-defined and defect-free crystal by advanced growth technique is proposed. Vacancy and void defect can be characterized better than previously.