The 83rd JSAP Autumn Meeting 2022

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20p-C306-1~9] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Sep 20, 2022 1:30 PM - 3:45 PM C306 (C306)

Satoshi Asada(電中研)

1:45 PM - 2:00 PM

[20p-C306-2] Analysis of Relaxation Time for Nitrogen Adatoms to Enter Steps on Misoriented (0001) Surfaces during Homoepitaxial Growth of 4H-SiC

〇Kazuhiro Mochizuki1, Tomoyoshi Mishima1 (1.Hosei Univ.)

Keywords:SiC, step, nitrogen