[20p-C306-1~9] 15.6 Group IV Compound Semiconductors (SiC)

[20p-C306-9] Lowest Concentration of ClF₃ gas for CVD Reactor Cleaning by Detaching SiC Film

Yuika Takizawa¹, 〇Hitoshi Habuka¹, Akio Ishiguro², Shigeaki Ishii², Toru Watanabe², Yoshikazu Moriyama², Yoshiaki Daigo², Ichiro Mizushima², Yoshinao Takahashi³ (1.Yokohama Nat. Univ., 2.NuFlare Technology, 3.KANTO DENKA KOGYO)

Keywords:Silicon carbide CVD, Reactor cleaning

For cleaning the susceptor of SiC CVD reator, the combination of purified pyrolytic carbon coating and the chlorine triflufride gas has been studied. In this study, the lowest possible concentration of chlorine trifluoride gas was evaluated.