[20p-C401-1~16] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-C401-1] Carrier relaxation dynamics in InGaN / GaN quantum dots

〇Kota Hasegawa¹, Yuichi Nakamura¹, Kazuki Kitami¹, Yuya Hirano¹, Atushi Takeuchi¹, Shulong Lu², Xue Zhang², Wenxian Yang² (1.Waseda Univ., 2.SINANO)

Keywords:InGaN quantum dots, Carrier relaxation, Tunnel time

Self-assembled quantum dots grown in Stranski-Krastanov(SK) mode are non-uniform in size, shape, and distance between dots, and have the problems of increased emission spectral width and decreased luminous efficiency. Therefore, it is important to elucidate their luminescence and carrier relaxation properties. In this experiment, we measured the photoluminescence (PL) of InGaN quantum dots in a time-resolved manner and analyzed the carrier relaxation process assuming carrier transfer due to the tunneling effect between dots.