The effect of tunneling on spin relaxation process in type-II tunneling bi-quantum-well

Yuichi Nakamura; Kazuki Kitami; Kota Hasegawa; Yuya Hirano; Atsushi Tackeuchi

Presentation information

Oral presentation

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-C401-1~16] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Tue. Sep 20, 2022 1:30 PM - 6:00 PM C401 (C401)

Toshihiro Nakaoka(Sophia Univ.), Ryuichi Ohta(NTT), Takayuki Hasegawa(Osaka Inst. of Tech.)

1:45 PM - 2:00 PM

[20p-C401-2] The effect of tunneling on spin relaxation process in type-II tunneling bi-quantum-well

〇Yuichi Nakamura¹, Kazuki Kitami¹, Kota Hasegawa¹, Yuya Hirano¹, Atsushi Tackeuchi¹ (1.Waseda Univ.)

Keywords:spin relaxation, tunneling effect, quantum well

The type-II GaAs/AlGaAs/AlAs tunneling bi-quantum-well (TBQ) is advantageous for the fast recovery time of excitonic absorption bleaching. In this study, we investigated the effect of barrier thickness on the tunneling effect and the spin relaxation mechanisms, especially about Bir-Aronov-Pikus process, in three GaAs/AlGaAs/AlAs type-II TBQ samples with different barrier widths by time-resolved spin-dependent pump and probe reflection measurement.