[21a-A105-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21a-A105-2] Investigation of Effects on Crystallinity of Metamorphic InAsSb on GaAs Substrate by Stacked Thermal Annealing

〇Shota Nakagawa¹, Koki Hombu¹, Yuto Iwakiri¹, Koji Maeda¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

Keywords:MOVPE, InAsSb, annealing

This time, we aimed to improve the crystallinity by stacked thermal annealing InAsSb on a GaAs substrate.Regarding the sample prepared this time, it was found from the observation of the cross section with a transmission electron microscope that dislocations were reduced in the upper part of the cross section. As a result of comparison by atomic force microscope, it was found that the surface flatness was deteriorated by stacked thermal annealing.