[21a-A105-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21a-A105-3] Strain Compensation and Emission Characteristics of InAsSb/InAsP Quantum Wells on InAs Substrate

〇Koki Hombu¹, Shota Nakagawa¹, Yuto Iwakiri¹, Koji Maeda¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

Keywords:MOVPE, InAsSb, strain compensation

In this study, 10-layer InAsSb/InAsP strain-compensated quantum wells were grown on an InAs substrate by metal organic vapor phase epitaxy (MOVPE). Clear photoluminescence emission was obtained at room temperature, and detailed results including differences in the composition and thickness of the InAsP strain-compensated layers and the number of pairs will be reported.