[21a-A106-1~9] 15.5 Group IV crystals and alloys

[21a-A106-3] High Carrier Mobility of Sn-Doped Poly-Ge Films by Interface-Modulated Solid-Phase Crystallization Combined with Post-Annealing

〇Taishiro Koga¹, Takaya Nagano¹, Kenta Moto^2,3, Kesuke Yamamoto², Taizo Sadoh¹ (1.ISEE, Kyushu Univ., 2.IGSES, Kyushu Univ., 3.JSPS Research Fellow)

Keywords:semiconductor