[21a-A106-1~9] 15.5 IV族結晶，IV-IV族混晶

▼ [21a-A106-6] Effect of CW Laser Annealing on the Optical Properties of Polycrystalline n-type Ge

〇Rahmat Hadi Saputro^1,2、Ryo Matsumura¹、Tatsuro Maeda³、Naoki Fukata^1,2 (1.NIMS、2.Univ. of Tsukuba、3.AIST)

キーワード：Germanium, Strain, Photoluminescence

Germanium (Ge) based materials are promising for optoelectronic device integration. It is known that Ge is an indirect-band semiconductor like silicon (Si). However, the introduction of tensile strain and n-type doping could transform Ge into a quasi direct-band semiconductor. Recently, we have grown polycrystalline Ge on quartz substrate by continuous wave laser annealing (CWLA), which also resulted in the introduction of 0.5-0.6% tensile strain. In this presentation, we applied the same method for Sb-doped Ge films and succesfully introduced both tensile strain and n-type doping. PL measurement revealed the potential optical application of this Ge films grown by CWLA.