[21a-B202-1~11] 13.9 Compound solar cells

[21a-B202-5] Formation and characterization of ZnS and CdZnS films using open-air chemical vapor deposition for buffer layers of compound semiconductor solar cells

〇Yuji Kurimoto¹, Daiki Kobayashi¹, Ayaka Kanai², Kunihiko Tanaka², Hideaki Araki³, Tamotsu Okamoto¹ (1.NIT Kisarazu Col., 2.Nagaoka Univ. of Tech., 3.NIT Nagaoka Col.)

Keywords:chalcogenide photovoltaics, buffer layer, Zinc sulfide

ZnS and CdS used for the buffer layer of CIGS, CdTe, and CZTS solar cells were prepared by an open-air CVD method that replaces conventional chemical bath deposition method. In ZnS, deposition rate increased from 0.88 nm/s to 4.5 nm/s as the substrate temperature Ts elevated from 400 ℃ to 465 ℃. On the other hand, in CdS, it increased from 2.2 nm/s to 7.2 nm/s with the gain of Ts from 419 ℃ to 465 ℃. The deposition rates of ZnS and CdS showed an Arrhenius-type change with respect to Ts. The half width of the (002) WZ peak of ZnS obtained by X-ray diffraction measurement was increased by the decrease of Ts. This fact means a degradation of the crystallinity of the ZnS film due to a decrease of Ts.