[21a-B202-1~11] 13.9 Compound solar cells

[21a-B202-6] Growth of ZnS buffer layer by atmospheric MOCVD method for CIGS solar cells

〇(M1)Fumiya Furumaki¹, Akihiro Funaki¹, Takahito Nishimura¹, Akira Yamada¹ (1.Tokyo Tech)

Keywords:CIGS solar cells, ZnS buffer layer

Cu(In,Ga)Se2 (CIGS) solar cells has CdS widely used as the n-type buffer layer. However, CdS is deposited by a chemical solution deposition method, which includes the cost of liquid waste treatment.The forbidden bandwidth (Eg) of CdS is narrow at 2.4 eV, and optical loss in the short wavelength region is a problem. In this paper, we report on the fabrication of ZnS buffer layers by atmospheric metalorganic chemical vapor deposition (atmospheric MOCVD), a non-vaccum and dry process that is advantageous for mass production, and the investigation of their crystal structures and optical properties.