The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

13 Semiconductors » 13.9 Compound solar cells

[21a-B202-1~11] 13.9 Compound solar cells

Wed. Sep 21, 2022 9:00 AM - 12:00 PM B202 (B202)

Hideaki Araki(Natl. Inst. of Tech.,Nagaoka Col.)

11:15 AM - 11:30 AM

[21a-B202-9] Electronic structure of CIS/Mo back interface in CIS Solar cells

Kohei Hamashiri1, Tsubasa Imanishi1, Yu Miyanohara1, Oki Kozima1, Motoya Ohba1, Takuya Kato2, Yoshinori Kimoto2, Syogo Ishiduka3, Jiro Nishinaga3, Hajime Shibata3, Yukiko Kamikawa3, Norio Terada1 (1.Kagoshima Univ., 2.Idemitsu Kosan Co.Ltd., 3.AIST)

Keywords:CIS Solar cells

For determining the band alignment at the interface between the back surface of Cu(In,Gs)(S,Se)2(CIS) absorber and the surface of Mo back electrode in the CIS-based solar cell, the back surface of the CIS and the surface of the Mo exposed by means of lift-off in UHV were characterized by means of in-situ direct and inverse photoemission spectroscopy and Kelvin probe microscopy. The experiments have revealed that the surface of the Mo electrode is covered with Mo-dichalcogenide layer with a work function higher than that of the back surface of the CIS. On the other hand, the work function of the metallic region of the Mo electrode is lower by about 1.0 eV than that of the surface. These results indicate that an upward band bending presents in the CIS-side interface and a large hole barrier exists between the surface and metallic region of the Mo electrode. The latter indicates that the tunnel conduction is a domination mechanism of the hole transportation in the CIS/Mo interface.