[21a-B203-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21a-B203-2] Non-polar p-type ZnMgO:N thin films grown by MBE

〇Keno Goto¹, Tsunataka Hagiwara¹, Ayumu Hyodo¹, Masaru Komido¹, Tomoki Abe¹, Kunio Ichino¹, Kazuaki Akaiwa¹ (1.Tottori Univ.)

Keywords:non-porlar a-ZnMgO:N, p-type conduction, molecular beam epitaxy (MBE)

When ZnO:N grows on the c-plane of the polar surface, an electric field due to polarization is generated on the surface and inhibits the doping of the N acceptor. Therefore, we epitaxially grow the non-polar a-plane ZnO:N on the r-plane sapphire substrates, and obtained p-ZnO:N of 10¹⁸ cm^-3. In this study, we report on a-plane p-ZnMgO:N of 10¹⁷ cm^-3.