[21a-B203-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21a-B203-9] Characterization of Nitrogen-doped SnO_x Thin Films Deposited by Sputtering in Ar/N₂

〇(M1)Takuma Kawaguchi¹, Kotaro Watanabe¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

Keywords:oxide semiconductor, nitrogen doping, nitrogen sputtering