[21a-B204-1~10] 6.3 Oxide electronics

[21a-B204-7] Brain-type characteristic of Schottky barrier-controlled Pt/Ti_0.99Fe_0.01O_2-δ /Pt device

〇Kisara Tomiyoshi¹, Mitsuki Taniguchi¹, Tomoasa Takada¹, Kaito Yako¹, Tohru Higuchi¹, Daisuke Shiga², Hiroshi Kumigashira² (1.Tokyo Univ. Sci., 2.Tohoku Univ)

Keywords:thin film, brain-type memory devices, oxygen vacancies

This study focused on brain-type memory devices that mimic the memory properties of brain synapses, which are not yet at a practical level. Pt/Ti_0.99Fe_0.01O_2-δ /Pt crosspoint structural films were fabricated, and the structural and brain-type properties were evaluated and their mechanisms elucidated using Schottky barrier changes caused by migration of oxygen vacancies. In addition to the results of brain-type properties, the structural evaluation of Ti_0.99Fe_0.01O_2-δ thin films and details of the electrical properties of the devices will be reported on the day.