The Effect of Hydrogen Impurities on Interfacial Magnetic Anisotropy Energy at Fe/MgO Structure in Magnetic Tunnel Junction

Takuya Nawa; Keisuke Morishita; Masaaki Araidai; Tetsuo Endoh; Kenji Shiraishi

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[21a-C105-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Wed. Sep 21, 2022 9:00 AM - 12:15 PM C105 (C105)

Kentaro Kinoshita(Tokyo Univ. of Sci.), Satoshi Yamauchi(茨大)

9:15 AM - 9:30 AM

[21a-C105-2] The Effect of Hydrogen Impurities on Interfacial Magnetic Anisotropy Energy at Fe/MgO Structure in Magnetic Tunnel Junction

〇Takuya Nawa¹, Keisuke Morishita¹, Masaaki Araidai^1,2, Tetsuo Endoh^3,4,5, Kenji Shiraishi^1,2,3 (1.Graduate School of Engineering, Nagoya Univ., 2.IMass, Nagoya Univ., 3.cies, Tohoku Univ., 4.Graduate School of Engineering, Tohoku Univ., 5.RIEC, Tohoku Univ.)

Keywords:MRAM, Magnetic Anisotropy