The 83rd JSAP Autumn Meeting 2022

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21a-C200-1~11] 15.4 III-V-group nitride crystals

Wed. Sep 21, 2022 9:00 AM - 12:00 PM C200 (C200)

Narihito Okada(Yamaguchi Univ.), Hisashi Murakami(TUAT)

9:00 AM - 9:15 AM

[21a-C200-1] Surface kinetics in HVPE growth of GaN layers on GaN (0001) freestanding substrates

〇Kazuki Ohnishi1, Naoki Fujimoto1, Shugo Nitta1, Hirotaka Watanabe1, Yoshio Honda1, Hiroshi Amano1,2,3 (1.IMaSS, Nagoya Univ., 2.ARC, Nagoya Univ., 3.VBL, Nagoya Univ.)

Keywords:HVPE, GaN