[21a-C200-1~11] 15.4 III-V-group nitride crystals

△ [21a-C200-9] Growth rate monitoring in Na-flux GaN crystal growth via electrical resistance measurement of Ga-Na melt

〇Ricksen Tandryo¹, Koichi Itozawa¹, Kosuke Murakami¹, Hitoshi Kubo¹, Masayuki Imanishi¹, Shigeyoshi Usami¹, Mihoko Maruyama¹, Masashi Yoshimura², Yusuke Mori¹ (1.Osaka Univ., 2.ILE, Osaka Univ.)

Keywords:crystal growth, monitoring, growth rate

Na-flux method had attracted attention as promising bulk GaN crystal growth method due to the demonstrated high-quality and large diameter GaN substrates. However, growing the crystal inside highly corrosive Ga-Na melt under high temperature and high pressure makes it difficult to monitor the crystal growth process. We proposed the electrical resistance measurement of Ga-Na melt as a novel monitoring technique. In this report, we identified that the electrical resistance of Ga-Na melt decreases as GaN crystals grow. Furthermore, by varying the growth pressure which changes the growth rate, we found that the decreasing rate of the electrical resistance is strongly correlated with the growth rate.