The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21a-C200-1~11] 15.4 III-V-group nitride crystals

Wed. Sep 21, 2022 9:00 AM - 12:00 PM C200 (C200)

Narihito Okada(Yamaguchi Univ.), Hisashi Murakami(TUAT)

11:15 AM - 11:30 AM

[21a-C200-9] Growth rate monitoring in Na-flux GaN crystal growth via electrical resistance measurement of Ga-Na melt

Ricksen Tandryo1, Koichi Itozawa1, Kosuke Murakami1, Hitoshi Kubo1, Masayuki Imanishi1, Shigeyoshi Usami1, Mihoko Maruyama1, Masashi Yoshimura2, Yusuke Mori1 (1.Osaka Univ., 2.ILE, Osaka Univ.)

Keywords:crystal growth, monitoring, growth rate

Na-flux method had attracted attention as promising bulk GaN crystal growth method due to the demonstrated high-quality and large diameter GaN substrates. However, growing the crystal inside highly corrosive Ga-Na melt under high temperature and high pressure makes it difficult to monitor the crystal growth process. We proposed the electrical resistance measurement of Ga-Na melt as a novel monitoring technique. In this report, we identified that the electrical resistance of Ga-Na melt decreases as GaN crystals grow. Furthermore, by varying the growth pressure which changes the growth rate, we found that the decreasing rate of the electrical resistance is strongly correlated with the growth rate.