[21a-C202-1~12] 17.3 Layered materials

[21a-C202-5] Phase-controlled growth of Ga_xS_y by metalorganic chemical vapor deposition

〇Yukihiro Endo¹, Yoshiaki Sekine¹, Yoshitaka Taniyasu¹ (1.NTT Basic Res. Labs.)

Keywords:III-VI semiconductor, metalorganic chemical vapor deposition, Gallium sulfide

To establish a phase-selective growth technique for Ga_xS_y thin films, we systematically investigated the crystal phase changes depending on the growth temperature and the S/Ga source gas ratio using metalorganic chemical vapor deposition. As the growth temperature increases, the crystal phase changes from GaS to Ga₂S₃. This phase change can be explained by their thermal stability. Besides, as the S/Ga source gas ratio increases, the crystal phase changes from GaS to Ga₂S₃, indicating that S-rich supply amount results in S-rich crystal phase.