The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21a-C206-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Sep 21, 2022 9:00 AM - 12:30 PM C206 (C206)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.)

9:15 AM - 9:30 AM

[21a-C206-2] Vapor phase chemical etching of silicon assisted by graphene oxide in combination with micro-contact printing

Wataru Kubota1, Ryoya Yamaoka1, Toru Utsunomiya1, Takashi Ichii1, Hiroyuki Sugimura1 (1.Kyoto Univ.)

Keywords:assisted-etching, graphene oxide, catalyst

Chemical etching of silicon assisted by noble metals and carbon materials is drawing much attention and assisted etching in a vapor phase is focused as an alternative method for assisted etching in a liquid phase. We reported that graphene oxide (GO) works as the catalyst for silicon etching reaction in the vapor phase. In this report, we succeeded in site-selective chemical etching of silicon assisted by micro-patterned GO formed by micro-contact printing.