[21a-C206-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21a-C206-3] Effect of ion diffusion and hydration on wet etching phenomena in nanoscale region

〇Yousuke Hanawa¹, Dai Ueda¹, Akiko Harumoto¹, Ichiro Tanabe², Ken-ichi Fukui³ (1.SCREEN HD Co., Ltd., 2.Rikkyo Univ., 3.Osaka Univ.)

Keywords:semiconductor, Etching, FUV

In the manufacturing process of semiconductor devices, etching rate (ER) reduction during etching removal of several nm wide material in the three-dimensional structure of the device has become an issue. In this study, porous glass with pores of a few nm in width was used as a model structure, and the hydration state and ion diffusion in the pores were analyzed spectroscopically by adding various additives. The correlation between these results and the ER of SiO₂ films with a few nm width in aqueous HF solutions with various additives was investigated.