[21a-C206-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21a-C206-7] Analysis of Energy Distribution of Disordered InP Quantum Dots

〇Jinhyong Lim¹, Nobuya Mori¹ (1.Osaka Univ.)

Keywords:Quantum Dots, Simulation, Atomistic Modeling

Since many quantum dots (QDs) with some type of disorders should exist in a real QD device, a statistical understanding of the electronic structure is essential. In this study, we calculated the energy levels of disordered InP QDs using an empirical tight-binding (TB) method, and investigated the influence of disorders such as surface roughness, shape, and strain on the energy distribution of InP QDs.