[21a-C301-1~10] 3.12 Semiconductor optical devices (formerly 3.13)

▲ [21a-C301-8] Characteristic Analysis of Isolation of Lateral-Electric-Field Electro-Absorption Modulator in GaAs by Proton Bombardment

〇(M2)Pengjun Yu¹, Kairi Atsugi¹, Jinkwan Kwoen², Yuichi MATSUSHIMA¹, kou Ishikawa¹, Yasuhiko Arakawa², Katsuyuki Utaka¹ (1.Waseda Univ, 2.Univ. of Tokyo)

Keywords:Electro-Absorption Modulator, Quantum Dot, proton implantation

Introduction: A Quantum Dot (QD) laser has superior properties such as low threshold current and high temperature stability, and it is predicted to be a high-performance light source combined with other optical components using quantum dot intermixing (QDI) technology. An electro-absorption modulator (EAM) is an important integrated optical component because of its high-speed operation and compactness, and lateral-electric-field EAM has recently been highlighted for high-speed modulation. In this paper, we present a new lateral-electric-field EAM with an insulation area produced by proton (H+) implantation, which has the benefit of being easier to fabricate than the prior one , and we report on the effects of doping implantation, for isolation implants and variable time during implantation on the achieved electrical isolation in n-type GaAs layers using proton bombardment.