[21p-A105-1~9] 15.3 III-V族エピタキシャル結晶・エピタキシーの基礎

▲ [21p-A105-4] Control of the 3D Submonolayer Nanostructure Density by GaAs Spacer Thickness

〇Ronel Intal Roca¹、Itaru Kamiya¹ (1.Toyota Tech. Inst.)

キーワード：submonolayer, nanostructures, InAs

Stacked submonolayer (SML)–grown InAs/GaAs nanostructures have been attracting interest as alternative to Stranki-Krastanov (SK) InAs nanostructures. While it was widely assumed that SML growth occurs strictly in the 2D (layer-by-layer) growth regime, it has recently been reported that a transition to 3D growth occurs when critical conditions are exceeded. The SML transition to 3D growth allows for the assembly of 3D SML nanostructures, which have distinct properties compared to 2D SML nanostructures. These 3D SML nanostructures can be used for applications ranging from quantum informatics to lasers. However, depending on the intended application, the nanostructure density can vary widely. In particular, single photon sources for quantum informatics require very low densities of 3D nanostructures, whereas, lasers benefit from high density. In the present work, it will be shown that by simply adjusting the GaAs spacer thickness, the density 3D SML nanostructures can widely be controlled from 10⁷~10¹¹ cm^-2, which would pave the way for these various applications.