1:15 PM - 1:30 PM
[21p-A106-2] Formation of direct transition Ge1-xSnx hetero epitaxial layer on Si(111) substrate
Keywords:Si(111), GeSn, direct transition
Oral presentation
15 Crystal Engineering » 15.5 Group IV crystals and alloys
Wed. Sep 21, 2022 1:00 PM - 5:45 PM A106 (A106)
Kaoru Toko(Univ. of Tsukuba), Ryo Matsumura(National Institute for Materials Science (NIMS))
1:15 PM - 1:30 PM
Keywords:Si(111), GeSn, direct transition