[21p-A106-1~18] 15.5 Group IV crystals and alloys

[21p-A106-4] TEM Observation of Cracks Formed in Strained SiGe/Ge (111)

〇Kouta Tajima¹, Junji Yamanaka¹, Keisuke Arimoto¹, Kosuke Hara¹, Yuya Wagatuma², Kentarou Sawano² (1.Univ. of Yamanashi, 2.Tokyo City Univ.)

Keywords:SiGe, Ge(111)

Ge(111) is an attracting material because of its high carrier mobility and the potential for the spintronics applications. From this viewpoint, we have been investigating SiGe/Ge(111) heterostructures. We reported the crack formation of this material. Recently, we found that the depth of the cracks tends to change according to the SiGe thickness, patterning condition, etc. In this study we will report these experimental results.