2022年第83回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

3 光・フォトニクス » 3.14 シリコンフォトニクス・集積フォトニクス(旧3.15)

[21p-A205-1~21] 3.14 シリコンフォトニクス・集積フォトニクス(旧3.15)

2022年9月21日(水) 13:00 〜 18:45 A205 (A205)

岡野 誠(産総研)、北 翔太(NTT)、山田 博仁(東北大)

14:00 〜 14:15

[21p-A205-5] Numerical analysis of III-V MOS optical modulator with graphene transparent electrode for efficient phase modulation

〇(D)Tipat Piyapatarakul1、Hanzhi Tang1、Kasidit Toprasertpong1、Shinichi Takagi1、Mitsuru Takenaka1 (1.Univ. of Tokyo)

キーワード:III-V semiconductor, graphene, MOS optical modulator

We propose the InGaAsP metal-oxide-semiconductor (MOS) optical modulator with doped graphene as transparent gate electrode with the analysis of the modulation properties and bandwidth. With graphene transparent gate electrode, we can thoroughly utilize the accumalated free-carrier refractive index change in InGaAsP waveguide, allowing the phase modulation efficiency up to 0.79 V·cm with low optical loss at pi phase shift of 0.22 dB when the gate oxide thickness is 100 nm. In addition, high electron mobility in InGaAsP also enables the modulation bandwidth to achieve over 100 GHz.