13:15 〜 13:30
▲ [21p-A404-2] Observation of energy dissipation in biased graphene via passive type near-field optical microscopy
キーワード：nanothermometry, passive near-field microscopy, graphene
Studying the energy dissipation on micro-scale graphene circuits is important to developing graphene-based electronic devices. Using passive scattering-type scanning near-field microscope (s-SNOM), we image nanoscale long-wavelength infrared (LWIR) thermal distribution in Joule-heated chemical vapor deposition (CVD) monolayer graphene device. The graphene device was fabricated in narrow constriction by using e-beam lithography. We observed the near-field signal largely increased in the narrow region with an increasing current. Further, we found the near-field signal gradually diffuses on the anode side of the wide graphene region. We consider an electron-phonon relaxation process to explain the phenomenon.