[21p-B201-1~16] 15.4 III-V-group nitride crystals

△ [21p-B201-11] Fabrication of low contact resistivity electrodes on nitrogen polar GaN substrates and vertical GaN-based quantum shell devices

〇Shiori Ii¹, Yukimi Jinno¹, Sae Katsuro¹, Nanami Nakayama¹, Shiori Yamamura¹, Mizuki Takahashi¹, Yuki Yamanaka¹, Ayaka Shima¹, Soma Inaba¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ.)

Keywords:nanowire, quantum shell active layer, N-polar GaN

Considering the high output power of the device, it is required to operate in the longitudinal conduction type and to be mounted with excellent heat dissipation. In this study, we investigated the reduction of contact resistivity of cathode electrodes and fabricated longitudinal conduction devices using optimized electrodes. After polishing the backside of the GaN substrate, the insulating damage layer can be removed by ICP equipment, and it was concluded that Ti/Pt/Au with a contact resistivity of 3 × 10^-6 Ωcm² is the optimal electrode. The voltage reduction due to longitudinal conduction was also confirmed.