13:30 〜 13:45
▼ [21p-B202-1] Effects of Thin Ag2S Buffer Layers on CuGaS2 Thin Films Grown with RF Sputtering
キーワード：CuGaS2 and Ag2S, Reactive Sputtering, Solar cell
CuGaS2 (CGS) is one of the potential compound materials for thin-film photovoltaics because of its high optical absorption coefficient and adjustable wide-bandgap gap. This study focuses on the effects of the Ag2S buffer layers on the crystalline growth of CGS thin films.
Thin buffer layers of Ag2S and thick CGS layers were deposited on quartz substrates using Radio Frequency magnetron sputtering. The deposition took place under a sulfur-rich environment at the substrate temperature of 400 °C with 1.4 Pa of pressure and 20W of RF power. X-ray diffractions and UV Visible light absorbance were measured to study the crystalline nature and optical properties.
In the study, it was observed that an improvement in crystalline quality was associated with an increase in the bandgap for CGS with a 20 nm-thick Ag2S buffer layer compared to reference CGS without the buffer.
Thin buffer layers of Ag2S and thick CGS layers were deposited on quartz substrates using Radio Frequency magnetron sputtering. The deposition took place under a sulfur-rich environment at the substrate temperature of 400 °C with 1.4 Pa of pressure and 20W of RF power. X-ray diffractions and UV Visible light absorbance were measured to study the crystalline nature and optical properties.
In the study, it was observed that an improvement in crystalline quality was associated with an increase in the bandgap for CGS with a 20 nm-thick Ag2S buffer layer compared to reference CGS without the buffer.