[21p-B203-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [21p-B203-1] Heteroepitaxial growth of β-(Al_xGa_1-x)₂O₃/β-(In_xGa_1-x)₂O₃/β-Ga₂O₃ thin films via mist CVD

〇Masahiro Kaneko¹, Hiroyuki Nishinaka¹, Kazutaka Kanegae¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech.)

Keywords:Gallium Oxide, mist CVD, wide band gap

Gallium oxide (Ga₂O₃) has a very large band gap of approximately 4.8 eV and is therefore attracting attention as a next-generation power semiconductor material. In this study, we demonstrated a heteroepitaxial growth of β-(Al_xGa_1-x)₂O₃/β-(In_xGa_1-x)₂O₃ on (010) β-Ga₂O₃ substrates.