The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B203-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 21, 2022 1:15 PM - 6:45 PM B203 (B203)

Kazuyuki Uno(Wakayama Univ.), Kosaku Shimizu(Nihon Univ.)

5:45 PM - 6:00 PM

[21p-B203-17] Fabrication of conductive anatase Ti1−xNbxO2 thin films by mist chemical vapor deposition

〇(D)Han XU1, Tomohito Sudare1, Yumie Miura1, Ryo Nakayama1, Ryota Shimizu1, Naoomi Yamada2, Kentaro Kaneko3, Taro Hitosugi1,4 (1.Tokyo Tech., 2.Chubu Univ., 3.Kyoto Univ, 4.Univ. Tokyo)

Keywords:mist chemical vapor deposition, conductive Nb:TiO2

Niobium-doped anatase titanium dioxide (Ti1−xNbxO2: TNO) thin films have gained much attention as a transparent conducting oxide. The deposition of TNO thin films have been mainly studied in vacuum physical vapor deposition. Herein, we alternatively applied mist chemical vapor deposition (mist-CVD) to the TNO thin films deposition, which is a high-throughput, scalable, cost-effective, and environmentally-friendly process. Although the fabrication of TNO thin films by mist-CVD have been reported, it is limited to highly toxic solvent toluene. In this study, we demonstrate that less toxic ethanol is effective on the fabrication of conductive TNO thin films.