The 83rd JSAP Autumn Meeting 2022

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B203-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 21, 2022 1:15 PM - 6:45 PM B203 (B203)

Kazuyuki Uno(Wakayama Univ.), Kosaku Shimizu(Nihon Univ.)

6:15 PM - 6:30 PM

△ [21p-B203-19] Amorphous Oxide Semiconductor Material toward 3D Integrated Devices

〇Takanori Takahashi1, Mutsunori Uenuma1, Masaharu Kobayashi2, Yukiharu Uraoka1 (1.NAIST, 2.Univ. of Tokyo)

Keywords:Oxide semiconductor