Time-of-flight mass spectrometric study of metalorganic vapor phase epitaxy process of β-Ga2O3

Haruka Tozato; Taro Nishimura; Kazutada Ikenaga; Shogo Sasaki; Ken Goto; Masato Ishikawa; Hideaki Machida; Yoshinao Kumagai

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B203-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 21, 2022 1:15 PM - 6:45 PM B203 (B203)

Kazuyuki Uno(Wakayama Univ.), Kosaku Shimizu(Nihon Univ.)

1:30 PM - 1:45 PM

△ [21p-B203-2] Time-of-flight mass spectrometric study of metalorganic vapor phase epitaxy process of β-Ga₂O₃

〇(M1)Haruka Tozato¹, Taro Nishimura¹, Kazutada Ikenaga^1,2, Shogo Sasaki³, Ken Goto¹, Masato Ishikawa⁴, Hideaki Machida⁴, Yoshinao Kumagai^1,3 (1.Tokyo Univ. of Agric. and Tech., 2.TAIYO NIPPON SANSO Corp., 3.TUAT FLOuRISH, 4.Gas-Phase Growth Ltd.)

Keywords:Gallium oxide, Metalorganic vapor phase epitaxy

Presentation information

[21p-B203-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [21p-B203-2] Time-of-flight mass spectrometric study of metalorganic vapor phase epitaxy process of β-Ga2O3

△ [21p-B203-2] Time-of-flight mass spectrometric study of metalorganic vapor phase epitaxy process of β-Ga₂O₃