[21p-C106-1~11] 6.5 Surface Physics, Vacuum

[21p-C106-3] Theoretical attempts to explore first-order photoelectron estimated for GaAs surfaces based on first-principles calculation

〇Ryoga Ouchi¹, Koichi Kusakabe², Motoharu Kitatani², Keiki Fukumoto³, Kunio Ishida⁴ (1.Osaka Univ., 2.Hyogo Univ., 3.KEK., 4.Utsunomiya Univ.)

Keywords:semiconductor, GaAs, first-principles calculations

A new experimental technique called TR-PEEM (photoelectron emission microscopy using a femtosecond wavelength tunable light source) has confirmed a phenomenon in which the lifetime of holes appears to change on the surface of GaAs, a p-type semiconductor. In this study, band calculations, work functions, and Wannier functions were obtained by first-principles calculations, and a Tight Binding Model for GaAs slabs was constructed to support this explanation based on experimental facts.