[21p-C202-1~8] 17.3 Layered materials

△ [21p-C202-5] Electrical Characteristics of Monolayer Tungsten Disulfide Nanoribbons Grown on Tungsten Oxide Nanowires

〇Misaki Kishibuchi¹, Zheng Liu², Yasumitsu Miyata³, Yasuhiko Hayashi¹, Hiroo Suzuki¹ (1.Okayama Univ., 2.AIST, 3.Tokyo Metropolitan Univ.)

Keywords:Transition metal dichalcogenide, Nanoribbons, Electric transport

We investigated the growth of monolayer WS₂ nanoribbons on W_xO_y nanowires by chemical vapor deposition. The monolayer was obtained with the self-limiting growth mechanism selectively. The temperature-dependent electrical transport showed the thermally activated conductivity, indicating the semiconducting behavior. We revealed that the field-effect transistor (FET) with the isolated WS₂ nanoribbons from W_xO_y nanowires behaved as an n-type FET.