[21p-C301-1~10] 3.12 Semiconductor optical devices (formerly 3.13)

[21p-C301-3] Incident Polarization Dependence in Spectroscopic Light Sensitivity of SOI Photodiode with Rectangular Lattice Metal Hole Array

〇Ryuji Yamamoto¹, Hiroaki Satoh^1,2, Ryo Takane¹, Hiroshi Inokawa^1,2 (1.GSIST, Shizuoka Univ., 2.RIE, Shizuoka Univ.)

Keywords:SOI Photodiode, SP antenna, spectroscopic light sensitivity

We have already reported that the thin silicon-on-insulator (SOI) photodiode with appropriately designed metal periodic structure can obtain the high light sensitivity at specific wavelengths.
In this report, we discuss about the light sensitivity in the SOI photodiode with rectangular lattice metal hole array, and its incident polarization dependence is evaluated. It is shown that the detected wavelength is changed by the polarization angle.