[21p-C306-1~5] 7.2 Applications and technologies of electron beams

[21p-C306-1] Dependence of work function of hafnium nitride thin films by reactive sputtering on nitrogen composition

〇Tomoaki Osumi^1,2, Masayoshi Nagao², Yasuhito Gotoh¹ (1.Kyoto Univ., 2.AIST)

Keywords:Hafnium nitride, Work function, Nitrogen composition

Hafnium nitride (HfN) thin films were deposited by reactive sputtering. Work functions of the films were evaluated by Kelvin probe in air. Nitrogen compositions of the films were measured by non-Rutherford backscattering spectrometry. Work functions were 4.49-4.75 eV in the range of N/Hf of 0.57-1.09. Work functions decreased as nitrogen compositions decreased in the range.