The 83rd JSAP Autumn Meeting 2022

Presentation information

Symposium (Oral)

Symposium » Forefront of interface science and technology of wide bandgap semiconductor MOS devices

[21p-M206-1~9] Forefront of interface science and technology of wide bandgap semiconductor MOS devices

Wed. Sep 21, 2022 1:30 PM - 5:35 PM M206 (Multimedia Research Hall)

Heiji Watanabe(Osaka Univ.), Digh Hisamoto(Hitachi)

1:50 PM - 2:20 PM

[21p-M206-2] Challenges in SiC Power MOSFETs and Improvement of SiC MOS Interface

Tsunenobu Kimoto1, Keita Tachiki1, Koji Ito1, Kyota Mikami1, Mitsuaki Kaneko1 (1.Kyoto Univ.)

Keywords:SiC, power MOSFET, channel mobility

Although the market of SiC power MOSFETs has been rapidly growing, there still exists a high density of interface states at the oxide/SiC interface, which severely limit the performance and reliablility of SiC MOSFETs. In this paper, recent progress in SiC power MOSFETs and improvement of the interface quality are reviewed.