[21p-M206-1~9] Forefront of interface science and technology of wide bandgap semiconductor MOS devices

[21p-M206-2] Challenges in SiC Power MOSFETs and Improvement of SiC MOS Interface

〇Tsunenobu Kimoto¹, Keita Tachiki¹, Koji Ito¹, Kyota Mikami¹, Mitsuaki Kaneko¹ (1.Kyoto Univ.)

Keywords:SiC, power MOSFET, channel mobility

Although the market of SiC power MOSFETs has been rapidly growing, there still exists a high density of interface states at the oxide/SiC interface, which severely limit the performance and reliablility of SiC MOSFETs. In this paper, recent progress in SiC power MOSFETs and improvement of the interface quality are reviewed.