[21p-M206-1~9] Forefront of interface science and technology of wide bandgap semiconductor MOS devices

[21p-M206-5] Characterization of Chemical Bonding and Electronic States of Dielectric/GaN Interfaces - Insights from Photoemission Studies

〇Seiichi Miyazaki Miyazaki¹, Akio Ohta¹ (1.Nagoya Univ.)

Keywords:GaN, dielectric interfaces, photoelectron spectroscopy

The results obtained from the characterization of chemical bonding features and electronic states, especially energy distribution of defect states, of GaN surfaces and near the interfaces between GaN and dielectrics by means of X-ray photoelectron spectroscopy, XPS, and total photoelectron yield spectroscopy, PYS, will be presented to discuss a guideline for the interface control.